RF GaN Semiconductor Market Developments Status, Analysis, Trend and Forecasts

RF GaN Semiconductor Market Analysis

The global RF GaN semiconductor device market size will touch USD 1,607.23 million at a 20.3% CAGR in the forecast period (2020-2027), states the latest Market Research Future report.

RF GaN Semiconductor Market Drivers/ RF GaN Semiconductor Market Trends

Rising Use of RF GaN Semiconductor Device in Defense Sector to Boost Market Growth

The rising use of such devices in the defense sector will boost market growth over the forecast period for the growing need for increased bandwidth as well as performance reality in electronic warfare, radars, radio communications, and others. SiC is the right choice for manufacturing bullet-proof jackets owing to its strength and hardness. ICs that are GaN-based are used in radars for effective navigation along with real-time air traffic control. Further, GaN can provide higher operating frequencies for terrestrial radios, military jammers, and radar communication. The growing adoption of wideband GaN power transistors from different defense forces is fuelling market growth.

Opportunities

Potential Usage of 5G Infrastructure to Provide Robust Opportunities

The usage of gallium nitride in 5G infrastructure will offer the market with robust opportunities in the forecast period. 5G replaced 4G in terms of traffic capacity, data rates, and energy efficiency. Commercially the 5G technology will be launched in 2021. It will offer different perks such as effective communication network with minimum cost. Technology giants such as ATT and Nokia are participating in the research and development initiative to build the 5G technology across the United States.

Restraints

High Cost of Material to act as Market Restraint

The high cost of fabrication and material may act as a market restraint in the forecast period.

Challenges

Designing Complexities to act as Market Challenge

Various complexities related to designing the GaN devices’ electrical layout may act as a market challenge in the forecast period. Besides, the COVID-19 impact may also impede market growth.

Market Segmentation

The global RF GaN semiconductor device market is segmented based on end user, applications, and material.

By material, the RF GaN semiconductor device market is segmented into GaN-On-Silicon, GaN-On-Diamond, and GaN-On-Sic.

By application, the RF GaN semiconductor device market is segmented into satellite communication, wireless infrastructure, PV inverter, power storage, and others.

By end user, the RF GaN semiconductor device market is segmented into IT and telecom, automotive, aerospace and defense, consumer electronics, and others.

Regional Analysis

North America to Sway RF GaN Semiconductor Device Market

North America will sway the market over the forecast period. Rising investments by organizations concerning 5G technology, the presence of various largest multinational corporations that offer devices for end users such as military and defense, electronics, IT and telecom, and others, increasing investments by the aerospace and defense sector in RD, the government in the region promoting the adoption of energy efficient devices and offering contacts to different companies, increasing use of GaN in consumer electronic devices including personal computers, televisions, laptops, tablet, PCs, and mobile phones for its efficiency, and different manufacturers emphasizing on innovating new products which are low cost and power efficient are adding to the RF GaN semiconductor devices market value in the region.

Key Players

Eminent players profiled in the global RF GaN semiconductor device market report include Mitsubishi Electric Corporation (Japan), Sumitomo Electric Industries, Ltd (Japan), Raytheon Company (US), Robert Bosch GmbH (Germany), STMicroelectronics (France), Hitachi, Ltd (Japan), Toshiba Corporation (Japan), Infineon Technologies AG (Germany), Panasonic Corporation (Japan), Microchip Technology (US), Renesas Electronics Corporation (Japan), Aethercomm Inc.(US), Cree, Inc. (US), Analog Devices Inc.(US), NXP Semiconductor (Netherlands), ROHM Semiconductors (Japan), Qorvo Inc. (US), among others.

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